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K814P/ K824P/ K844P
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The K814P/ K824P/ K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes (reversed polarity) in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
Feature phones, answering machines, PABX, fax machines
Coll. Emitter
14925
Features
D Endstackable to 2.54 mm (0.1') spacing D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) of typical 100% D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D CSA (C-UL) 1577 recognized, file number E-76222 - Double Protection D Coupling System U
Anode Cath. 4 PIN 8 PIN 16 PIN 13947
D DC isolation test voltage VIO = 5 kV
C
Order Instruction
Ordering Code K814P K824P K844P CTR Ranking < 20% < 20% < 20% Remarks 4 Pin Single channel 8 Pin Dual channel 16 Pin Quad channel
Rev. A4, 11-Jan-99
161
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K814P/ K824P/ K844P
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW C
tp 10 m s Tamb 25C
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C
tp/T = 0.5, tp 10 ms Tamb 25C
Coupler
Parameter Test Conditions AC Isolation test voltage (RMS) t = 1 min Total power dissipation Tamb 25C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 5 250 -40 to +100 -55 to +125 260 Unit kV mW C
C C
162
Rev. A4, 11-Jan-99
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K814P/ K824P/ K844P
Vishay Telefunken Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Reverse current Test Conditions IF = 50 mA VR = 6 V Symbol VF IR Min. Typ. 1.25 Max. 1.6 10 Unit V mA
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 100 m A IE = 100 m A VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA
100
Coupler
Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF
100 0.3
Current Transfer Ratio (CTR)
Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA Type Symbol CTR Min. 0.2 Typ. Max. 3.0 Unit
Rev. A4, 11-Jan-99
163
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K814P/ K824P/ K844P
Vishay Telefunken Switching Characteristics
Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ( (see figure 1) g ) Symbol td tr tf ts ton toff ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Unit
VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 2) g )
ms ms ms ms ms ms ms ms
0 RG = 50W tp T = 0.01 tp = 50 ms
IF
IF
+5V IC = 2 mA ; adjusted through input amplitude
96 11698
IF 0 Oscilloscope RL > 1 MW CL < 20 pF tp IC 100% 90%
Channel I Channel II 50 W
13343
t
100 W
Figure 1. Test circuit, non-saturated operation
0 RG = 50 W tp T = 0.01 tp = 50 ms
IF
IF = 10 mA
+5V IC
10% 0 tr td ton ts toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) tf
t
Channel I Channel II 50 W
13344
Oscilloscope RL > 1 MW CL < 20 pF
1 kW
tp tion td tr ton (= td + tr)
storage time fall time turn-off time
Figure 2. Test circuit, saturated operation
Figure 3. Switching times
164
Rev. A4, 11-Jan-99
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K814P/ K824P/ K844P
Vishay Telefunken Typical Characteristics (Tamb = 25_ C, unless otherwise specified)
300 P tot - Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0
96 11700
10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000
100
10
1 40 80 120
95 11026
0
25
50
75
100
Figure 4. Total Power Dissipation vs. Ambient Temperature
1000.0 IC - Collector Current ( mA )
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 7. Collector Dark Current vs. Ambient Temperature
100 VCE=5V 10
I F - Forward Current ( mA )
100.0
10.0
1
1.0
0.1
0.1 0
96 11862
0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V )
95 11027
0.1
1
10
100
IF - Forward Current ( mA )
Figure 5. Forward Current vs. Forward Voltage
CTR rel - Relative Current Transfer Ratio 2.0
Figure 8. Collector Current vs. Forward Current
100 IC - Collector Current ( mA )
VCE=5V IF=5mA 1.5
20mA IF=50mA 10 10mA 5mA 2mA 1mA 0.1
1.0
1
0.5
0 -25
95 11025
0
25
50
75
95 10985
0.1
1
10
100
Tamb - Ambient Temperature ( C )
VCE - Collector Emitter Voltage ( V )
Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature
Figure 9. Collector Current vs. Collector Emitter Voltage
Rev. A4, 11-Jan-99
165
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K814P/ K824P/ K844P
Vishay Telefunken
V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 20% 0.8 CTR=50% 0.6 50 Saturated Operation VS=5V RL=1kW
t on / t off - Turn on / Turn off Time ( m s )
40
30 toff 20 10 0 ton 0 5 10 15 20
0.4 0.2 0 1 10 IC - Collector Current ( mA ) 100
10%
95 11028
95 11031
IF - Forward Current ( mA )
Figure 10. Collector Emitter Saturation Voltage vs. Collector Current
1000 CTR - Current Transfer Ratio ( % ) VCE=5V 100
Figure 12. Turn on / off Time vs. Forward Current
t on / t off - Turn on / Turn off Time ( m s )
10 Non Saturated Operation VS=5V RL=100W
8
ton
6 toff 4 2 0
10
1 0.1
95 11029
1
10
100
95 11030
0
2
4
6
10
IF - Forward Current ( mA )
IC - Collector Current ( mA )
Figure 11. Current Transfer Ratio vs. Forward Current Pin 1 Indication Type
Figure 13. Turn on / off Time vs. Collector Current
K814P 820UTK63
15083
Date Code (YM)
Company Production Coupling Logo Location System Indicator Figure 14. Marking example
166
Rev. A4, 11-Jan-99
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K814P/ K824P/ K844P
Vishay Telefunken Dimensions of K814P in mm
weight: ca. 0.25 g creepage distance:y 6 mm air path: 6 mm
y
after mounting on PC board
14789
Dimensions of K824P in mm
weight: ca. 0.55 g creepage distance:y 6 mm air path: 6 mm
y
after mounting on PC board
14784
Rev. A4, 11-Jan-99
167
14784
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K814P/ K824P/ K844P
Vishay Telefunken Dimensions of K844P in mm
weight: ca. 1.0 g creepage distance:y 6 mm air path: 6 mm
y
after mounting on PC board
14783
168
Rev. A4, 11-Jan-99


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